Binning for IC Quality: Experimental Studies on the SEMATECH Data

The earlier smaller bipolar study did not provide a high enough bin 0 population to directly observe test escapes and thereby estimate defect levels for the best bin. Results presented here indicate that the best bin can be reasonably expected to show a 2 - 5 factor improvement in defect levels over the average for the lot for moderate to high yields (the overall yield for these experiments was approximately 65%). The experiments also confirm the dependence of the best bin quality on test transparency. The defect level improvement is poorer for the case Of IDDQ escapes where the tests applied had a much higher escape rate. Overall experimental results are consistent with analytical projections for typical values of the clustering parameter in [9]. The final version of this paper will include extensive analysis to validate the analytical models based on this data

Special session: Hot topics: Statistical test methods

International audienceThe process of testing Integrated Circuits involves a huge amount of data: electrical circuit measurements, information from wafer process monitors, spatial location of the dies, wafer lot numbers, etc. In addition, the relationships between faults, process variations and circuit performance are likely to be very complex and non-linear. Test (and its extension to diagnosis) should be considered as a challenging highly dimensional multivariate problem.Advanced statistical data processing offers a powerful set of tools, borrowed from the fields of data mining, machine learning or artificial intelligence, to get the most out of this data. Indeed, these mathematical tools have opened a number of novel and interesting research lines within the field of IC testing.In this special session, prominent researchers in this field will share their views on this topic and present some of their last findings. The first talk will discuss the interest of likelihood prevalence in random fault simulation. The second talk will show how statistical data analysis can help diagnosing test efficiency. The third talk will deal with the reliability of Alternate Test of AMS-RF circuits. The fourth and last talk will address the idea of mining the test data for improving design manufacturing and even test itself

Leveraging Partially Enhanced Scan for Improved Observability in Delay Fault Testing

Enhanced Scan design can significantly improve the fault coverage for two pattern delay tests at the cost of exorbitantly high area overhead. The redundant flip-flops introduced in the scan chains have traditionally only been used to launch the two-pattern delay test inputs, not to capture tests results. This paper presents a new, much lower cost partial Enhanced Scan methodology with both improved controllability and observability. Facilitating observation of some hard to observe internal nodes by capturing their response in the already available and underutilized redundant flip-flops improves delay fault coverage with minimal or almost negligible cost. Experimental results on ISCAS'89 benchmark circuits show significant improvement in TDF fault coverage for this new partial enhance scan methodology

SEU Tolerant Robust Memory Cell Design

The implementation of semiconductor circuits and systems in nano-technology makes it possible to achieve high speed, lower voltage level and smaller area. The unintended and undesirable result of this scaling is that it makes integrated circuits susceptible to soft errors normally caused by alpha particle or neutron hits. These events of radiation strike resulting into bit upsets referred to as single event upsets(SEU), become increasingly of concern for the reliable circuit operation in the field. Storage elements are worst hit by this phenomenon. As we further scale down, there is greater interest in reliability of the circuits and systems, apart from the performance, power and area aspects. In this paper we propose an improved 12T SEU tolerant SRAM cell design. The proposed SRAM cell is economical in terms of area overhead. It is easy to fabricate as compared to earlier designs. Simulation results show that the proposed cell is highly robust, as it does not flip even for a transient pulse with 62 times the Q(crit) of a standard 6T SRAM cell

Test Application Time Minimization for RAS using Basis Optimization of Column Decoder

Random Access Scan, which addresses individual flip-flops in a design using a memory array like row and column decoder architecture, has recently attracted widespread attention, due to its potential for lower test application time, test data volume and test power dissipation when compared to traditional Serial Scan. This is because typically only a very limited number of random ``care'' bits in a test response need be modified to create the next test vector. Unlike traditional scan, most flip-flops need not be updated. Test application efficiency can be further improved by organizing the access by word instead of by bit. In this paper we present a new decoder structure that takes advantage of basis vectors and linear algebra to further significantly optimize test application in RAS by performing the write operations on multiple bits consecutively. Simulations performed on benchmark circuits show an average of 2-3 times speed up in test write time compared to conventional RAS